Technology

ELSPES Silicon Capacitor

  • 3D Deep Trench & High-K Dielectric
    ELSPES's high-performance silicon capacitors have been developed using semiconductor processes and a deep trench structure to increase the electrode surface area, thereby raising the capacitance value for a higher density capacitor. The ELSPES silicon capacitor is based on a multi-layer Metal-Insulator-Metal (MIM) design with a high-k dielectric serving as its insulator, resulting in even greater capacitance value per unit area.
  • Small Form Factor & Low Impedance
    This high-k dielectric material provides more capacitance value in an area than any other silicon-based capacitor or multi-layer ceramic capacitor, with a thickness of 70 µm (lower values are available upon request). Thanks to this advanced high-k dielectric, ELSPES silicon capacitors not only offer higher capacitance density but also exhibit reduced leakage current, lower power consumption, and ultra-low equivalent series resistance (ESR) and equivalent series inductance (ESL).
  • High Stability & Foundry Fab
    The ELSPES silicon capacitor is manufactured in one of the world's best foundries, ensuring the highest quality in our products and reliable performance. Our silicon capacitors also boast high stability and undergo advanced reliability tests at the end of the production process, guaranteeing that only the highest quality products are released to the market.

ELSPES Capacitor as LSC(Land Side Capacitor)