Products

Decoupling

Introduction

  • Si Capacitor as the Next Generation
    Silicon capacitors are a newer type of capacitor that has emerged as an alternative to MLCCs. Silicon capacitors offer several advantages over MLCCs, including higher voltage ratings, lower voltage derating behavior, increased temperature stability, and lower ESR and ESL.
  • Flexible Product Size & Design
    ELSPES Silicon Capacitors are customizable based on customers' requests. We offer a range of sizes and thicknesses to meet individual requirements. Customers can choose capacitance values according to the available sizes and thickness options. Additionally, the size and number of bumps are customizable, with options available for up to 200 terminals/mm².

Catalog

ELSPES ultra-high-density silicon capacitors have been developed with high-k dielectrics and low-resistivity electrodes using semiconductor processes, employing a deep trench 3D structure to achieve a smaller size and higher capacitance. ELSPES's technology offers a range of form factors, providing high capacitance levels up to 1,000 nF/mm² (with 2,000 nF/mm² under development).

Currently, products with a silicon thickness of 70 μm are in the production stage (50 μm available on request). Reliable dielectric and electrode performance, as well as capacitance and electrical characteristics, are optimized through silicon processes.

Customizable multi-terminals contribute to the high performance (low ESR and low ESL) of the silicon capacitor in various designs. ELSPES silicon capacitors feature stability in the face of temperature and voltage changes, ensuring reliability over a 10-year lifespan (TDDB).

Spice Model

The SPICE model for ELSPES silicon capacitors is derived through simulation based on real product measurements using an RLC model. The physical model is estimated roughly, and RLC values are configured to ensure that the SPICE model closely mirrors the impedance curve obtained from measurements. The RLC model, derived through curve-fitting of the measurement data, represents the capacitance, Equivalent Series Resistance (ESR), and Equivalent Series Inductance (ESL) of ELSPES silicon capacitors.

  • [RF Measurement of ELSPES Silicon Capacitor]
  • [Model vs. Real Measurement Impedance Graph]

E1PD5 Data Sheet

  • Key Features
    1. ELSPES 1st Generation Si Capacitor (Deep Trench)
    2. > 1,000 nF/mm2 Capacitance Density (1st Gen.)
    3. Use for Power Delivery
    4. > 5 V Breakdown Voltage for Mobile and HPC
    5. -50°C ~ 150°C Operation Temperature Range
  • [ Power integrity of Decoupling Si Capacitor ]
    Power Delivery
    Items Target Achieved
    Equivalent Series Resistance (ESR) < 30 mΩ 1.6 mΩ
    Equivalent Series Inductance (ESL) < 30 pH 0.5 pH
    Voltage Coefficient of Capacitance (VCC) < 1.0%/V 0.6%/V
    Temperature Coefficient of Capacitance (TCC) < 1.0%/°C 0.02%/°C
    Breakdown Voltage > 5 V 5.3 V